Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (2024)

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Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic Mn3PtN compared to Mn3Pt thin films

Nitipriya Tripathi, Shrawan K. Mishra, Yoshio Miura, and Shinji Isogami
Phys. Rev. B 109, 224406 – Published 4 June 2024
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Abstract

The bilayer structures consisting of Mn3PtN (5 nm)/CoFeB(3 nm) and Mn3Pt(5 nm)/CoFeB(3 nm) were fabricated via magnetron sputtering to investigate the role of nitrogen on charge-to-spin conversion efficiency in the noncollinear antiferromagnets (AFMs). The crystal structure of Mn3PtN (MPN) without N is consistent with that of Mn3Pt (MP) with L12-ordered structure, which allows us to study the different charge-to-spin conversion efficiency for AFMs with and without N. The spin-torque ferromagnetic resonance and second-harmonic Hall measurements were performed for both samples. It was revealed that the spin Hall angle (θSH) of the MPN with spin polarization in the y direction was observed to be ∼0.033, exceeding the corresponding value of MP (∼0.025), which was qualitatively supported by the first-principles calculation. These results led us to conclude that N plays a crucial role in stabilizing the noncolliear antiferromagnetic structure and creating an electronic state advantage for the enhanced θSH.

  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (1)
  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (2)
  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (3)
  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (4)
  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (5)
  • Received 17 January 2024
  • Revised 6 April 2024
  • Accepted 13 May 2024

DOI:https://doi.org/10.1103/PhysRevB.109.224406

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Nitipriya Tripathi*,† and Shrawan K. Mishra

Yoshio Miura and Shinji Isogami*,‡

  • *These authors contributed equally to this work.
  • Corresponding author: nitipriyatripathi.rs.mst20@itbhu.ac.in
  • Corresponding author: isogami.shinji@nims.go.jp

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Vol. 109, Iss. 22 — 1 June 2024

Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (6)
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  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (10)

    Figure 1

    (a) Unit cell of Mn3PtN (MPN) crystal with antiperovskite structure together with the possible Γ4g-type magnetic structure. (b) Out-of-plane XRD profile for the stacking of MgOsub./MPN(5)/CoFeB(3)/MgO(2) (in nm). The dashed lines represent the fitting curves with pseudo-Voit function to estimate the degree of order (S). Inset shows an atomic force microscopy image of the 25-nm-thick MPN surface. (c), (d) The same as 1(a) and 1(b), but regarding the Mn3Pt (MP).

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  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (11)

    Figure 2

    (a), (b) Magnetic hysteresis (solid circles) and anomalous Hall resistivity (ρxy) (open triangles) for the 5-nm-thick MPN (a) and the 5-nm-thick MP single layers (b) as a function of the out-of-plane magnetic field (Hperp) at room temperature. (c) Magnetic hysteresis for the stacking of MgOsub./MPN(5)/CFB(3)/MgO(2) (red) and that of MgO sub./MP(5)/CFB(3)/MgO(2) (blue) (in nm) as a function of in-plane magnetic field (Hinp) at room temperature. The inset represents the enlarged magnetic hysteresis loops near the zero field.

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  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (12)

    Figure 3

    (a) Spin-torque ferromagnetic resonance (ST-FMR) setups together with the typical field-domain spectrum (Vmix) recorded at the in-plane magnetic field (H) with the azimuthal angle of φ = 45 °. The blue and green solid lines represent the Lorentzian and anti-Lorentzian fitting results using Eq.(3), respectively. (b), (c) Relationship between the resonance field (Hr) and the applied rf frequency (f) (b), and the f and ST-FMR linewidth (ΔH) (c) for both MgOsub./MPN(5)/CFB(3)/MgO(2) and MgOsub./MP(5)/CFB(3)/MgO(2) (in nanometers). (d), (e) φ dependence of symmetric Lorentzian (Vs) and antisymmetric Lorentzian (Va) components for the same samples. The solid and dashed lines represent the fitting curve using Eqs.(6) and(7), respectively. (f), (g) Dependences of spin Hall angles (θSH) on f (f) and the thickness of MPN and MP layers (g) estimated using Eq.(8), which is dominated by the spin torque originating from the polarization in y direction.

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  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (13)

    Figure 4

    (a) Measurement configuration of the second-harmonic Hall voltage. (b) Electric conductance as a function of the CoFeB layer thickness (dCFB). The dashed lines represent the fitting results using the formula Rxx1(LW)=dCFBρxxCFB+dAFMρxxAFM. (c), (d) Second-harmonic Hall voltage (Vxy2ω) as a function of azimuthal angle of in-plane field (φ) with Iac=2 mA and Hext=50 mT. Solid and dashed lines represent the fitting results by Eqs.(9, 10, 11). (e), (f) Fitting parameter |A| under the various H, where Hk represents the anisotropy field evaluated by AHE (see Fig. S4 in Supplemental Material[51]). Dashed lines represent the linear fit to the plots for higher H region to obtain the HDL as shown by Eq.(10).

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  • Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (14)

    Figure 5

    (a)–(c) Calculated spin Hall conductivities for MP and MPN σαβγ as a function of energy (E) relative to the Fermi level (EF), where α, β, and γ are the direction of current flow, the direction of spin current, and the polarization direction of the spin (spin quantum axis), respectively. (d) Spin Berry curvature at the EF along the high-symmetry line in the first Brillouin zone for Mn3Pt and Mn3PtN. (e), (f) Projections of each atomic orbital on the band dispersions of Mn3Pt and Mn3PtN along high-symmetry line around the EF. The projections on N orbitals are magnified by a factor of 3 compared to other atomic orbitals. The high-symmetry k points (x,y,z) are Γ(0,0,0), X(0,1/2,0) M(1/2,1/2,0), A(1/2,1/2,1/2), Z(0,0,1/2), andR(0,1/2,1/2) in the Brillouin zone xb1+yb2+zb3, respectively. The b1,b2,b3 are the reciprocal vectors of the tetragonal cell.

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Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (2024)
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