Physical Review B
covering condensed matter and materials physics
- Highlights
- Recent
- Accepted
- Collections
- Authors
- Referees
- Search
- Press
- About
- Editorial Team
Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic compared to thin films
Nitipriya Tripathi, Shrawan K. Mishra, Yoshio Miura, and Shinji Isogami
Phys. Rev. B 109, 224406 – Published 4 June 2024
- Article
- References
- No Citing Articles
- Supplemental Material
PDFHTMLExport Citation
Abstract
The bilayer structures consisting of (5 nm)/CoFeB(3 nm) and (5 nm)/CoFeB(3 nm) were fabricated via magnetron sputtering to investigate the role of nitrogen on charge-to-spin conversion efficiency in the noncollinear antiferromagnets (AFMs). The crystal structure of (MPN) without N is consistent with that of (MP) with -ordered structure, which allows us to study the different charge-to-spin conversion efficiency for AFMs with and without N. The spin-torque ferromagnetic resonance and second-harmonic Hall measurements were performed for both samples. It was revealed that the spin Hall angle of the MPN with spin polarization in the direction was observed to be ∼0.033, exceeding the corresponding value of MP (∼0.025), which was qualitatively supported by the first-principles calculation. These results led us to conclude that N plays a crucial role in stabilizing the noncolliear antiferromagnetic structure and creating an electronic state advantage for the enhanced .
- Received 17 January 2024
- Revised 6 April 2024
- Accepted 13 May 2024
DOI:https://doi.org/10.1103/PhysRevB.109.224406
©2024 American Physical Society
Physics Subject Headings (PhySH)
- Research Areas
Spin currentSpin-orbit torque
- Physical Systems
Nitrides
Condensed Matter, Materials & Applied Physics
Authors & Affiliations
Nitipriya Tripathi*,† and Shrawan K. Mishra
- School of Materials Science and Technology, Indian Institute of Technology (BHU), Varanasi-221005, India
Yoshio Miura and Shinji Isogami*,‡
- Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba 305-0047, Japan
- *These authors contributed equally to this work.
- †Corresponding author: nitipriyatripathi.rs.mst20@itbhu.ac.in
- ‡Corresponding author: isogami.shinji@nims.go.jp
Article Text (Subscription Required)
Click to Expand
Supplemental Material (Subscription Required)
Click to Expand
References (Subscription Required)
Click to Expand
Issue
Vol. 109, Iss. 22 — 1 June 2024
Access Options
- Buy Article »
- Log in with individual APS Journal Account »
- Log in with a username/password provided by your institution »
- Get access through a U.S. public or high school library »
![Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (9) Impact of nitrogen on the charge-to-spin conversion efficiency in antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{PtN}$ compared to ${\mathrm{Mn}}_{3}\mathrm{Pt}$ thin films (9)](https://i0.wp.com/cdn.journals.aps.org/development/journals/images/author-services-placard.png)
Authorization Required
Other Options
- Buy Article »
- Find an Institution with the Article »
Images
Figure 1
(a) Unit cell of (MPN) crystal with antiperovskite structure together with the possible -type magnetic structure. (b) Out-of-plane XRD profile for the stacking of MgOsub./MPN(5)/CoFeB(3)/MgO(2) (in nm). The dashed lines represent the fitting curves with pseudo-Voit function to estimate the degree of order (S). Inset shows an atomic force microscopy image of the 25-nm-thick MPN surface. (c), (d) The same as 1(a) and 1(b), but regarding the (MP).
Figure 2
(a), (b) Magnetic hysteresis (solid circles) and anomalous Hall resistivity () (open triangles) for the 5-nm-thick MPN (a) and the 5-nm-thick MP single layers (b) as a function of the out-of-plane magnetic field () at room temperature. (c) Magnetic hysteresis for the stacking of MgOsub./MPN(5)/CFB(3)/MgO(2) (red) and that of MgO sub./MP(5)/CFB(3)/MgO(2) (blue) (in nm) as a function of in-plane magnetic field () at room temperature. The inset represents the enlarged magnetic hysteresis loops near the zero field.
Figure 3
(a) Spin-torque ferromagnetic resonance (ST-FMR) setups together with the typical field-domain spectrum () recorded at the in-plane magnetic field (H) with the azimuthal angle of φ = 45 °. The blue and green solid lines represent the Lorentzian and anti-Lorentzian fitting results using Eq.(3), respectively. (b), (c) Relationship between the resonance field () and the applied rf frequency () (b), and the and ST-FMR linewidth (ΔH) (c) for both MgOsub./MPN(5)/CFB(3)/MgO(2) and MgOsub./MP(5)/CFB(3)/MgO(2) (in nanometers). (d), (e) φ dependence of symmetric Lorentzian () and antisymmetric Lorentzian () components for the same samples. The solid and dashed lines represent the fitting curve using Eqs.(6) and(7), respectively. (f), (g) Dependences of spin Hall angles () on (f) and the thickness of MPN and MP layers (g) estimated using Eq.(8), which is dominated by the spin torque originating from the polarization in direction.
Figure 4
(a) Measurement configuration of the second-harmonic Hall voltage. (b) Electric conductance as a function of the CoFeB layer thickness (). The dashed lines represent the fitting results using the formula . (c), (d) Second-harmonic Hall voltage () as a function of azimuthal angle of in-plane field (φ) with mA and mT. Solid and dashed lines represent the fitting results by Eqs.(9, 10, 11). (e), (f) Fitting parameter |A| under the various H, where represents the anisotropy field evaluated by AHE (see Fig. S4 in Supplemental Material[51]). Dashed lines represent the linear fit to the plots for higher H region to obtain the as shown by Eq.(10).
Figure 5
(a)–(c) Calculated spin Hall conductivities for MP and MPN as a function of energy (E) relative to the Fermi level (), where , , and are the direction of current flow, the direction of spin current, and the polarization direction of the spin (spin quantum axis), respectively. (d) Spin Berry curvature at the along the high-symmetry line in the first Brillouin zone for and . (e), (f) Projections of each atomic orbital on the band dispersions of and along high-symmetry line around the . The projections on N orbitals are magnified by a factor of 3 compared to other atomic orbitals. The high-symmetry points are , , , , in the Brillouin zone , respectively. The are the reciprocal vectors of the tetragonal cell.